| PART |
Description |
Maker |
| SN7002W |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - SOT323, 60V, 5Ohm, 0.23A
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP15P10P |
Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ30ASMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.13 Ohm, 21A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ344 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BSP317P |
Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-223, RDSon = 4
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP123 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=6 Ohm, 0.37A, LL
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| BUZ104L C67078-S1358-A2 BUZ104LE3046 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BSS125 Q67000-S233 Q62702-S021 Q67000-S008 BSS125Q |
N-Channel SIPMOS Small-Signal Transistor
SIPMOS ? Small-Signal Transistor
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
Transient Voltage Suppressor Diodes
SIPMOS Small-Signal Transistor (N channel Enhancement mode) SIPMOS小信号晶体管N通道增强模式
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 100 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
